Semiconductor, Biotechnology, Magnetic media, Chemistry, Optical coatings, Polymers; Production and R&D

 

M-Probe Series Thin-film measurement:

Spectral Reflection and Transmission

M-Probe series thin-film measurement system is based on a fiber optics backscattering reflection or transmittance probe.

Small, precise, easy to use and low-budget instrument used for in-situ and ex-situ (desktop) measurements - it is a real workhorse in research lab and production.

Download MProbe brochure pdf

Download MProbe Measurement101 pdf ( Basics & Software)

Download Mapping option brochure.pdf

Ready to start measurements - everything is included:

spectrometer, light source, fiber optics probe, sample stage, software and computer

(You can use it for many other purposes as well:

spectral radiometry, colorimetry, chemical concentration, etc.)

 

Why use M-Probe
Applications

Flexible: select best hardware configuration for your application

( If you already have some components -purchase only what you need and assemble the system)

Affordable: up to 50% savings as compared to other commercial instruments

Materials database: extended database is included

Software: flexible, user friendly and powerful software; integrated control/data acquisition and data analysis; any filmstack: no limits on number of layers, support inhomogeneous and thick incoherent layers, surface roughness, multi-sample analysis, etc.

Integration: import data from other instruments or integrate over network.

In situ ready: real-time monitoring or post-mortem analysis

Technical support: application and technical support

50Å-400µm thickness range

Thin-film solar cells: aSi, CIGS, CdT, TCO

Semiconductor and dielectric materials (Photoresist, oxides, nitrides, OLED stack)

Optical coatings (Anti-Reflection, Hardness coatings, Filters)

Liquid Crystal displays (Cell Gaps, ITO, Polyamides)

Magnetic media

Laser mirrors

Thin metal films

Virtually any translucent or light absorbing film may be measured: SiO2, SiNx, DLC, Photoresist, Polymer, Polyamide, polySi, nanocrystalline Si, aSi, Si, Parylene, industrial coatings.

 

Basic specification

Precision 1Å or 0.1% (greater of) s.d. of 100 thickness reading of 200nm SiO2/Si calibration sample
Accuracy 0.2% or 10A (greater of) Filmstack dependent
Stability 0.5A or 0.1% (greater of) 2 sigma over 20 days (100 measurements daily) on 200nm/Si calibration sample
Spot size 3 mm standard, optional down to 3 µm  
Sample size from 1 mm  

 

System configurations *:

Model
Wavelength range,nm
Spectrometer/Detector
Light Source
Comments
Vis 400-1100

F4, X-Czerny/Si CCD 3600pixels/ ADC-16 bit

Tungsten-Halogen

High-precision measurements

Thickness: 3nm-50µm

UVVis

 

200-1100

 

X-Czerny/ Si CCD 2048 pixels/16 bits ADC-16 bit

Deuterium/Tungsten-Halogen

Thickness: 3nm -50µm

HRVis

700-1050

X-Czerny/ Si CCD 3600 pixes/ADC 16 bit /resolution <0.25nm

Tungsten-Halogen

Thickness: 1um -400µm

NIR

HRNIR

NIR2

 

900-1700

900-1700

900-2300nm

 

F2 Transmission /InGaAs CCD 512 pixels TE Cooled/ADC - 16 bit

X-Czerny/InGaAs CCD 1024pixels TE Cooled/ADC - 16 bit

X-Czerny/InGaAs CCD 1024pixels TE Cooled/ADC - 16 bit

 

 

Tungsten-Halogen

 

 

 

Thickness 100nm-300µm

Thickness 100nm-400µm

Thickness 100nm-300µm

 

VisNIR

 

400-1700

 

Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) /ADC - 16 bit

 

Tungsten-Halogen Thickness 15nm-200µm

UVVis-NIR

UVVis-NIR2

 

200-1700nm

 

200-2300nm

 

Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) / ADC - 16 bit

Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) / ADC - 16 bit

 

Deuterium/Tungsten-Halogen Thickness: 3nm-300µm
NIR Scan 900 -5000nm

Scanning spectrometer/ InGaAs, MCT detectors/

ADC -24 bits

Tungsten-Halogen/ SiN Thickness 100nm - 800um

* Typical configurations. Other ranges and congifurations are avaialble.

 

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