M-Probe Series Thin-film measurement:
Spectral Reflection and Transmission
M-Probe series thin-film measurement system is based on a fiber optics backscattering reflection or transmittance probe.
Small, precise, easy to use and low-budget instrument used for in-situ and ex-situ (desktop) measurements - it is a real workhorse in research lab and production.
Download MProbe Measurement101 pdf ( Basics & Software)
Download Mapping option brochure.pdf
Ready to start measurements - everything is included:
spectrometer, light source, fiber optics probe, sample stage, software and computer
(You can use it for many other purposes as well:
spectral radiometry, colorimetry, chemical concentration, etc.)
Flexible: select best hardware configuration for your application
( If you already have some components -purchase only what you need and assemble the system)
Affordable: up to 50% savings as compared to other commercial instruments
Materials database: extended database is included
Software: flexible, user friendly and powerful software; integrated control/data acquisition and data analysis; any filmstack: no limits on number of layers, support inhomogeneous and thick incoherent layers, surface roughness, multi-sample analysis, etc.
Integration: import data from other instruments or integrate over network.
In situ ready: real-time monitoring or post-mortem analysis
Technical support: application and technical support
50Å-400µm thickness range
Thin-film solar cells: aSi, CIGS, CdT, TCO
Semiconductor and dielectric materials (Photoresist, oxides, nitrides, OLED stack)
Optical coatings (Anti-Reflection, Hardness coatings, Filters)
Liquid Crystal displays (Cell Gaps, ITO, Polyamides)
Magnetic media
Laser mirrors
Thin metal films
Virtually any translucent or light absorbing film may be measured: SiO2, SiNx, DLC, Photoresist, Polymer, Polyamide, polySi, nanocrystalline Si, aSi, Si, Parylene, industrial coatings.
Basic specification
Precision 1Å or 0.1% (greater of) s.d. of 100 thickness reading of 200nm SiO2/Si calibration sample Accuracy 0.2% or 10A (greater of) Filmstack dependent Stability 0.5A or 0.1% (greater of) 2 sigma over 20 days (100 measurements daily) on 200nm/Si calibration sample Spot size 3 mm standard, optional down to 3 µm Sample size from 1 mm
System configurations *:
Vis 400-1100 F4, X-Czerny/Si CCD 3600pixels/ ADC-16 bit
Tungsten-Halogen High-precision measurements
Thickness: 3nm-50µm
UVVis
200-1100
X-Czerny/ Si CCD 2048 pixels/16 bits ADC-16 bit
Deuterium/Tungsten-Halogen Thickness: 3nm -50µm
HRVis
700-1050
X-Czerny/ Si CCD 3600 pixes/ADC 16 bit /resolution <0.25nm
Tungsten-Halogen Thickness: 1um -400µm
NIR
HRNIR
NIR2
900-1700
900-1700
900-2300nm
F2 Transmission /InGaAs CCD 512 pixels TE Cooled/ADC - 16 bit
X-Czerny/InGaAs CCD 1024pixels TE Cooled/ADC - 16 bit
X-Czerny/InGaAs CCD 1024pixels TE Cooled/ADC - 16 bit
Tungsten-Halogen
Thickness 100nm-300µm
Thickness 100nm-400µm
Thickness 100nm-300µm
VisNIR
400-1700
Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) /ADC - 16 bit
Tungsten-Halogen Thickness 15nm-200µm UVVis-NIR
UVVis-NIR2
200-1700nm
200-2300nm
Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) / ADC - 16 bit
Two spectrometer channels/detectors (Si 2048 pixels CCD and InGaAs 512 or 1024 pixels CCD) / ADC - 16 bit
Deuterium/Tungsten-Halogen Thickness: 3nm-300µm NIR Scan 900 -5000nm Scanning spectrometer/ InGaAs, MCT detectors/
ADC -24 bits
Tungsten-Halogen/ SiN Thickness 100nm - 800um * Typical configurations. Other ranges and congifurations are avaialble.
